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DMG4800LK3-13

Name: Diodes Incorporated DMG4800LK3-13
Brand: Diodes Incorporated
SKU: 621-DMG4800LK3-13
Price: 5.58 DKK
Availability: InStock

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See Product Specifications

Mouser No:

621-DMG4800LK3-13

Mfr. No:

DMG4800LK3-13

Mfr.:

Diodes Incorporated

Description:

MOSFETs ENHANCE MODE MOSFET N Chan 30V/6.5-10.0A

Datasheet:

DMG4800LK3-13 Datasheet (PDF)

ECAD Model:

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Learn more about Diodes Incorporated DMG4800LK3-13

In Stock: 7.515

Stock:: 7.515 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+47,00 kr.)

Pricing (DKK)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	5,58 kr.	5,58 kr.
	3,46 kr.	34,60 kr.
	2,25 kr.	225,00 kr.
	1,72 kr.	860,00 kr.
	1,54 kr.	1.540,00 kr.
Full Reel (Order in multiples of 2500)
	1,24 kr.	3.100,00 kr.
	1,13 kr.	5.650,00 kr.
	1,10 kr.	11.000,00 kr.

† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	10 A
Rds On - Drain-Source Resistance:	12 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	800 mV
Qg - Gate Charge:	8.7 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.71 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Diodes Incorporated
Configuration:	Single
Fall Time:	8.55 ns
Product Type:	MOSFETs
Rise Time:	4.5 ns
Series:	DMG4800
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	N-Channel
Typical Turn-Off Delay Time:	26.33 ns
Typical Turn-On Delay Time:	5.03 ns
Unit Weight:	330 mg

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Filter Document:

Datasheet

DMG4800LK3-13 Datasheet (PDF)

PCN

Product Change Notification 2025-10-15 (PDF)

Environmental Compliance (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

DMG44x & DMG48x Enhancement Mode MOSFETs

The Diodes Inc. DMG44x and DMG48x Enhancement Mode MOSFETs are high-reliability N-channel enhancement mode MOSFETs. These DMG44x and DMG48x enhancement mode MOSFETs feature low on-resistance, low input capacitance, fast switching speed, and low input/output leakage.