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DMG1012UW-7

Name: Diodes Incorporated DMG1012UW-7
Brand: Diodes Incorporated
SKU: 621-DMG1012UW-7
Price: 1.67 DKK
Availability: InStock

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Mouser No:

621-DMG1012UW-7

Mfr. No:

DMG1012UW-7

Mfr.:

Diodes Incorporated

Description:

MOSFETs MOSFET N-CHANNEL SOT-323

Datasheet:

DMG1012UW-7 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Diodes Incorporated DMG1012UW-7

In Stock: 61.767

Stock:: 61.767

Can Dispatch Immediately

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On Order:: 54.000

Expected 17/07/2026
Factory Lead Time:: 24

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- kr.

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+47,00 kr.)

Pricing (DKK)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,67 kr.	1,67 kr.
	0,858 kr.	8,58 kr.
	0,522 kr.	52,20 kr.
	0,433 kr.	216,50 kr.
Full Reel (Order in multiples of 3000)
	0,283 kr.	849,00 kr.
	0,261 kr.	1.566,00 kr.
	0,246 kr.	2.214,00 kr.

† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-323-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	1 A
Rds On - Drain-Source Resistance:	450 mOhms
Vgs - Gate-Source Voltage:	- 6 V, 6 V
Vgs th - Gate-Source Threshold Voltage:	500 mV
Qg - Gate Charge:	736.6 pC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	290 mW
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Diodes Incorporated
Configuration:	Single
Fall Time:	12.3 ns
Product Type:	MOSFETs
Rise Time:	7.4 ns
Series:	DMG1012
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	26.7 ns
Typical Turn-On Delay Time:	5.1 ns
Unit Weight:	6 mg

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Datasheet

DMG1012UW-7 Datasheet (PDF)

PCN

Environmental Compliance (PDF)

TARIC:: 8541210000
CNHTS:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
KRHTS:: 8541219000
MXHTS:: 8541210100
ECCN:: EAR99

DMx Enhancement Mode MOSFETs

Diodes Incorporated DMx series enhancement mode MOSFETs feature low on-resistance and fast switching, making them ideal for high efficiency power management applications. Diodes Incorporated DMx enhancement mode MOSFETs are also optimized for motor control, backlighting, and DC-DC converter applications. Diodes Incorporated DMx series includes complementary dual, complementary pair, P-channel, and N-channel enhancement mode MOSFETs.

Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.