DIF120SIC022

Diotec Semiconductor
637-DIF120SIC022
DIF120SIC022

Mfr.:

Description:
SiC MOSFETs 1200V TO-247-4L, N, 120A, 1200V, 22.3m?, 175°C

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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In Stock: 438

Stock:
438 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
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Ext. Price:
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Est. Tariff:
This Product Ships FREE

Pricing (DKK)

Qty. Unit Price
Ext. Price
510,34 kr. 510,34 kr.
398,96 kr. 3.989,60 kr.
239,32 kr. 28.718,40 kr.
510 Quote

Product Attribute Attribute Value Select Attribute
Diotec Semiconductor
Product Category: SiC MOSFETs
RoHS:  
Through Hole
TO-247-4
N-Channel
1 Channel
1.2 kV
120 A
22.3 mOhms
- 4 V, + 18 V
4 V
269 nC
- 55 C
+ 175 C
340 W
Enhancement
DIF120SIC022
Brand: Diotec Semiconductor
Configuration: Single
Fall Time: 35 ns
Forward Transconductance - Min: 41.5 S
Product: MOSFETs
Product Type: SiC MOSFETS
Rise Time: 38 ns
Factory Pack Quantity: 30
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 108 ns
Typical Turn-On Delay Time: 150 ns
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Attributes selected: 0

Datasheet

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TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

TO-247-3L/4L Silicon Carbide (SiC) MOSFETs

Diotec Semiconductor TO-247-3L/4L Silicon Carbide (SiC) MOSFETs are ideally suited for high voltage and high frequency switching used in charging systems for electric vehicles (EV), solar inverters, or telecom power supplies. These MOSFETs feature a high 1200V and 650V reverse voltage, extremely low on-resistance, total Gate charge, low switching time, and low total switching energy. Advanced planar technology and the Silicon Carbide wafer material enable higher on-resistances at higher switching frequencies. These MOSFETs are used in DC-DC converters, DC drives, inverters, charging stations, Power Factor Correction (PFC), solar inverters, and power supplies.

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