CDFG6558N TR13 PBFREE

Central Semiconductor
610-CDFG6558NTR13PBF
CDFG6558N TR13 PBFREE

Mfr.:

Description:
GaN FETs 650V, 29A, N-Channel Chip, GaN FET, DFN5X6A Package, 13"

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 2.483

Stock:
2.483 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
69,68 kr. 69,68 kr.
48,34 kr. 483,40 kr.
40,36 kr. 4.036,00 kr.
39,54 kr. 39.540,00 kr.
Full Reel (Order in multiples of 2500)
34,24 kr. 85.600,00 kr.

Product Attribute Attribute Value Select Attribute
Central Semiconductor
Product Category: GaN FETs
RoHS:  
SMD/SMT
DFN-8
N-Channel
1 Channel
650 V
29 A
80 mOhms
- 6 V, + 7 V
2.5 V
6.2 nC
- 55 C
+ 150 C
Depletion
Brand: Central Semiconductor
Configuration: Single
Fall Time: 4 ns
Packaging: Reel
Packaging: Cut Tape
Product: Field Effect Transistors
Product Type: GaN FETs
Rise Time: 4 ns
Series: GaN FETs
Factory Pack Quantity: 2500
Subcategory: Transistors
Technology: GaN
Transistor Type: 1 N-Channel
Type: Power FET
Typical Turn-Off Delay Time: 5 ns
Typical Turn-On Delay Time: 3 ns
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Attributes selected: 0

TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

GaN N-Channel FETs

Central Semiconductor GaN N-Channel FETs excel in high voltage and low RDS(ON), making them ideal for efficient soft-switching applications. Central Semiconductor GaN FETs come in 100V (60A), 150V (60A), 650V (11A), 650V (17A), and 700V (18A) versions. The devices are available in practical surface-mount, chip-scale packages, and bare dies. Ideally, these FETs are used in switch-mode power supplies, high-power chargers, and Electric Vehicle (EV) inverters.