CDF56G6517N TR13 PBFREE

Central Semiconductor
610-CDF56G6517NTR13P
CDF56G6517N TR13 PBFREE

Mfr.:

Description:
GaN FETs 650V, 17A, N-Channel GaN FET

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In Stock: 2.438

Stock:
2.438 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
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Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
36,33 kr. 36,33 kr.
27,98 kr. 279,80 kr.
20,37 kr. 2.037,00 kr.
19,77 kr. 19.770,00 kr.
Full Reel (Order in multiples of 2500)
17,23 kr. 43.075,00 kr.

Product Attribute Attribute Value Select Attribute
Central Semiconductor
Product Category: GaN FETs
RoHS:  
SMD/SMT
DFN-8
N-Channel
1 Channel
650 V
17 A
140 mOhms
- 1.4 V, + 7 V
2.5 V
3.5 nC
- 55 C
+ 150 C
113 W
Depletion
Brand: Central Semiconductor
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 4 ns
Maximum Operating Frequency: 100 kHz
Minimum Operating Frequency: 0 Hz
Packaging: Reel
Packaging: Cut Tape
Product Type: GaN FETs
Rise Time: 5 ns
Factory Pack Quantity: 2500
Subcategory: Transistors
Technology: GaN
Typical Turn-Off Delay Time: 4 ns
Typical Turn-On Delay Time: 3 ns
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Attributes selected: 0

TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

GaN N-Channel FETs

Central Semiconductor GaN N-Channel FETs excel in high voltage and low RDS(ON), making them ideal for efficient soft-switching applications. Central Semiconductor GaN FETs come in 100V (60A), 150V (60A), 650V (11A), 650V (17A), and 700V (18A) versions. The devices are available in practical surface-mount, chip-scale packages, and bare dies. Ideally, these FETs are used in switch-mode power supplies, high-power chargers, and Electric Vehicle (EV) inverters.