NXH030P120M3F1PTG

onsemi
863-NXH030P12M3F1PTG
NXH030P120M3F1PTG

Mfr.:

Description:
MOSFET Modules 30M 1200V 40A M3S SIC HALF BRIDGE MODULE

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 25

Stock:
25 Can Dispatch Immediately
Factory Lead Time:
19 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
This Product Ships FREE

Pricing (DKK)

Qty. Unit Price
Ext. Price
491,69 kr. 491,69 kr.
409,03 kr. 4.090,30 kr.
372,48 kr. 41.717,76 kr.

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFET Modules
RoHS:  
SiC
Screw Mount
PIM-18
N-Channel
2 Channel
1.2 kV
42 A
38.5 mOhms
- 10 V, + 22 V
4.4 V
- 40 C
+ 150 C
100 W
NXH030P120M3F1PTG
Tray
Brand: onsemi
Configuration: Half-Bridge
Fall Time: 9.4 ns
Height: 12.35 mm
Length: 63.3 mm
Product Type: MOSFET Modules
Rise Time: 6.6 ns
Factory Pack Quantity: 28
Subcategory: Discrete and Power Modules
Tradename: EliteSiC
Type: Half Bridge
Typical Turn-Off Delay Time: 84.8 ns
Typical Turn-On Delay Time: 19.6 ns
Width: 34.1 mm
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Attributes selected: 0

TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

NXH0xxP120M3F1 Silicone Carbide (SiC) Modules

onsemi NXH0xxP120M3F1 Silicone Carbide (SiC) Modules contain 8mΩ/1200V, 10mΩ/1200V, 15mΩ/1200V, and 30mΩ/1200V M3S SiC MOSFETs based on half-bridge topology and a thermistor in a F1 package. These modules feature pre-applied Thermal Interface Material (TIM) and without pre-applied TIM. The NXH0xxP120M3F1 modules are designed with press-fit pins and are Pb-free, Halide-free, and RoHS-compliant. These power modules are used in solar inverters, industrial power, Electric Vehicle (EV) charging stations, and Uninterruptible Power Supplies (UPS).