NTTFS007P02P8

onsemi
863-NTTFS007P02P8
NTTFS007P02P8

Mfr.:

Description:
MOSFETs Power MOSFET, Single, P-Channel, -20V, 6.5mohm, -56A, PQFN8 3x3 P-Channel, -20V, 6.5m ohms, PQFN8 3x3

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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In Stock: 2.100

Stock:
2.100 Can Dispatch Immediately
Factory Lead Time:
24 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
7,53 kr. 7,53 kr.
4,90 kr. 49,00 kr.
4,06 kr. 406,00 kr.
3,89 kr. 1.945,00 kr.
3,76 kr. 3.760,00 kr.
Full Reel (Order in multiples of 3000)
3,42 kr. 10.260,00 kr.
3,33 kr. 19.980,00 kr.

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
PQFN-8
P-Channel
1 Channel
20 V
56 A
6.5 mOhms
8 V
1 V
44 nC
- 55 C
+ 150 C
30 W
Enhancement
Reel
Cut Tape
Brand: onsemi
Configuration: Single
Fall Time: 68 ns
Forward Transconductance - Min: 80 S
Product Type: MOSFETs
Rise Time: 33 ns
Series: NTTFS007P02P8
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 119 ns
Typical Turn-On Delay Time: 19 ns
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Attributes selected: 0

Datasheet

TARIC:
8541290000
ECCN:
EAR99

NTTFS007P02P8 P-Channel Low/Medium Voltage MOSFET

onsemi NTTFS007P02P8 P-Channel Low/Medium Voltage MOSFET is built using high-performance PowerTrench technology for extremely low RDS(on) switching performance and ruggedness. This P-channel MOSFET offers high power and current-handling capabilities in a widely used surface-mount package. The NTTFS007P02P8 MOSFET features -20V drain to source voltage, ±8V gate to source voltage, 3.8°C/W thermal resistance, junction to case, and 4.5Ω gate resistance. This P-channel  MOSFET is Pb-free, Halide-free, and RoHS compliant. Typical applications include load switch, battery management, power management, and reverse polarity protection.

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