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NTMJS2D5N06CLTWG

Name: onsemi NTMJS2D5N06CLTWG
Brand: onsemi
SKU: 863-NTMJS2D5N06CLTWG
Price: 15.59 DKK
Availability: InStock

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Mouser No:

863-NTMJS2D5N06CLTWG

Mfr. No:

NTMJS2D5N06CLTWG

Mfr.:

onsemi

Description:

MOSFETs 60V 2.5mOhms 150A Single N-Channel

Datasheet:

NTMJS2D5N06CLTWG Datasheet

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In Stock: 2.907

Stock:: 2.907 Can Dispatch Immediately

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Factory Lead Time:: 23 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (DKK)

Qty.	Unit Price	Ext. Price
	15,59 kr.	15,59 kr.
	10,07 kr.	100,70 kr.
	6,86 kr.	686,00 kr.
	5,49 kr.	2.745,00 kr.
	5,24 kr.	5.240,00 kr.
Full Reel (Order in multiples of 3000)
	5,04 kr.	15.120,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	LFPAK-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	31 A
Rds On - Drain-Source Resistance:	3.3 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Qg - Gate Charge:	24 nC, 52 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	113 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	JP
Fall Time:	8.5 ns
Forward Transconductance - Min:	286 S
Product Type:	MOSFETs
Rise Time:	55 ns
Series:	NTMJS2D5N06CL
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1-N-Channel
Typical Turn-Off Delay Time:	37 ns
Typical Turn-On Delay Time:	10 ns
Unit Weight:	99,445 mg

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Datasheet

NTMJS2D5N06CLTWG Datasheet

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.