NSVT5551MR6T1G

onsemi
863-NSVT5551MR6T1G
NSVT5551MR6T1G

Mfr.:

Description:
Bipolar Transistors - BJT NPN GENERAL-PURPOSE AMPLIFIER

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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More Information
Learn more about onsemi NSVT5551MR6T1G

In Stock: 2.441

Stock:
2.441 Can Dispatch Immediately
Factory Lead Time:
10 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
6,03 kr. 6,03 kr.
3,72 kr. 37,20 kr.
2,54 kr. 254,00 kr.
2,00 kr. 1.000,00 kr.
1,72 kr. 1.720,00 kr.
Full Reel (Order in multiples of 3000)
1,40 kr. 4.200,00 kr.
1,29 kr. 7.740,00 kr.
1,19 kr. 10.710,00 kr.
1,16 kr. 27.840,00 kr.

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: Bipolar Transistors - BJT
RoHS:  
Si
SMD/SMT
TSOT-23-6
NPN
Dual
160 V
180 V
6 V
700 mW
300 MHz
+ 150 C
NSVT5551M
Reel
Cut Tape
Brand: onsemi
Continuous Collector Current: 600 mA
DC Collector/Base Gain hFE Min: 80 at 1 mA, 5 V
Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity: 3000
Subcategory: Transistors
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Attributes selected: 0

TARIC:
8541210000
USHTS:
8541210075
ECCN:
EAR99

NSVT5551M Bipolar Transistor

onsemi NSVT5551M Bipolar Transistor is an AEC-Q101 qualified NPN general-purpose low VCE(sat) amplifier. This NPN bipolar transistor has matched dies and operates at -55°C to 150°C storage temperature range. The NSVT5551M BJT Pb-free, halogen-free, BFR-free, and RoHS-compliant. This transistor is generally used for many different applications.

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