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FGH40T120SMD

Name: onsemi FGH40T120SMD
Brand: onsemi
SKU: 512-FGH40T120SMD
Price: 64.01 DKK
Availability: InStock

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Mouser No:

512-FGH40T120SMD

Mfr. No:

FGH40T120SMD

Mfr.:

onsemi

Description:

IGBTs 1200V 40A FS2 Trench IGBT

Datasheet:

FGH40T120SMD Datasheet

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In Stock: 1.094

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Factory Lead Time:: 15 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	64,01 kr.	64,01 kr.
	37,08 kr.	370,80 kr.
	31,41 kr.	3.769,20 kr.
	30,66 kr.	15.636,60 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	IGBTs
REACH - SVHC:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.8 V
Maximum Gate Emitter Voltage:	- 25 V, 25 V
Continuous Collector Current at 25 C:	80 A
Pd - Power Dissipation:	555 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	FGH40T120SMD
Packaging:	Tube
Brand:	onsemi
Gate-Emitter Leakage Current:	+/- 400 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	30
Subcategory:	IGBTs
Unit Weight:	6,390 g

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Datasheet

FGH40T120SMD Datasheet

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Field Stop IGBTs

onsemi Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. onsemi IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.

1200V Field Stop Trench IGBTs

onsemi 1200V Field Stop Trench IGBTs feature minimized conduction losses by having a VCE(SAT) of 1.8V, lower than previous fast switching NPT IGBTs. The 1200V field stop trench IGBTs target hard switching industrial applications such as solar inverters, uninterruptible power supplies (UPS), and welders. The 1200V field stop trench IGBT series operates at high switching frequencies, and is 100% tested for clamped inductive switching at current levels of four times the rated current to guarantee a larger safe operating area. onsemi 1200V Field Stop Trench IGBTs are available in TO-247-3, TO-247-4, and DPAK-3 packages, and are offered in 15A, 25A, and 40A ratings.

Industrial Power Solutions

Industrial applications will be a major contributor to the expected 35% to 40% world energy demand increase by 2030. Electronics and semiconductors can play a major role in energy conservation. onsemi power semiconductors today are clean energy enablers for a variety of industrial applications. onsemi offers IGBTs and MOSFETs featuring high current handling capability and low conduction and switching loss; optically isolated gate drivers with wide operating voltage range and high common-mode transient immunity; FPS™ controllers designed for high-performance power supplies with minimal external components; creative smart dual-coil relay drivers with integrated switches and wafer-level adjust capability for timing customization; and web-based tools that eliminate tedious bench time and allow popular power supply designs to be completed in minutes, saving weeks of time. onsemi combines power analog, power discrete and optoelectronic functional technologies, unique combinations of these functions for novel integrated solutions, and leading process and packing technologies that reduce size, heat, and cost. From source to system, look to onsemi for engineering energy efficiency.