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IRFR220PBF

Name: Vishay IRFR220PBF
Brand: Vishay Semiconductors
SKU: 844-IRFR220PBF
Price: 5.01 DKK
Availability: InStock

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See Product Specifications

Mouser No:

844-IRFR220PBF

Mfr. No:

IRFR220PBF

Mfr.:

Vishay Semiconductors

Description:

MOSFETs TO252 200V 4.8A N-CH MOSFET

Datasheet:

IRFR220PBF Datasheet

ECAD Model:

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In Stock: 19.673

Stock:: 19.673 Can Dispatch Immediately

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (DKK)

Qty.	Unit Price	Ext. Price
	5,01 kr.	5,01 kr.
	3,14 kr.	31,40 kr.
	2,86 kr.	286,00 kr.
	2,61 kr.	1.305,00 kr.
	2,19 kr.	2.190,00 kr.
	2,14 kr.	6.420,00 kr.
	2,11 kr.	12.660,00 kr.

Alternative Packaging

Mfr. Part No.:

IRFR220TRPBF

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

8,21 kr.

Min:

Mfr. Part No.:

IRFR220TRRPBF

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

8,21 kr.

Min:

Mfr. Part No.:

IRFR220PBF-BE3

Packaging:

Bulk

Availability:

In Stock

Price:

13,50 kr.

Min:

Similar Product

Mfr.:

Vishay Semiconductors

Mfr. No:

IRFR220PBF-BE3

Description:

MOSFETs TO252 200V 4.8A N-CH MOSFET

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	4.8 A
Rds On - Drain-Source Resistance:	800 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	14 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	42 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Vishay Semiconductors
Configuration:	Single
Fall Time:	13 ns
Forward Transconductance - Min:	1.7 S
Product Type:	MOSFETs
Rise Time:	22 ns
Series:	IRFR/U
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	19 ns
Typical Turn-On Delay Time:	7.2 ns
Unit Weight:	330 mg

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Qualification of ASE as an Additional Assembly Site of DPAK Commercial 
Power Mosfets 

DESCRIPTION OF CHANGE: Vishay Siliconix would like to announce the 
approval of Advanced Semiconductor Engineering (ASE) plant located in 
Weihai, China as an additional assembly facility for DPAK, MOSFET 
devices. 

Please contact a Mouser Technical Sales Representative for further
information.

5-0614-3