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TK8P60W5,RVQ

Name: Toshiba TK8P60W5,RVQ
Brand: Toshiba
SKU: 757-TK8P60W5RVQ
Price: 9.33 DKK
Availability: InStock

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Mouser No:

757-TK8P60W5RVQ

Mfr. No:

TK8P60W5,RVQ

Mfr.:

Toshiba

Description:

MOSFETs Power MOSFET N-Channel

Datasheet:

TK8P60W5,RVQ Datasheet (PDF)

ECAD Model:

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In Stock: 1.657

Stock:: 1.657 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 2000)

Cut Tape

MouseReel™ (+47,00 kr.)

Pricing (DKK)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	9,33 kr.	9,33 kr.
	6,86 kr.	68,60 kr.
	5,31 kr.	531,00 kr.
Full Reel (Order in multiples of 2000)
	5,31 kr.	10.620,00 kr.

† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	8 A
Rds On - Drain-Source Resistance:	440 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	22 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	80 W
Channel Mode:	Enhancement
Tradename:	DTMOSIV
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Single
Fall Time:	5.5 ns
Product Type:	MOSFETs
Rise Time:	40 ns
Series:	TK8P60W5
Factory Pack Quantity:	2000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	70 ns
Typical Turn-On Delay Time:	60 ns
Unit Weight:	330 mg

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Datasheet

TK8P60W5,RVQ Datasheet (PDF)

Application Notes

Models

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Test/Quality Data

Reliability Tests Report

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

DTMOSIV Series MOSFETs

Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in R_DS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the R_DS(on) makes it possible to house lower R_DS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.