TK12A60D(STA4,Q,M)

Toshiba
757-TK12A60DSTA4QM
TK12A60D(STA4,Q,M)

Mfr.:

Description:
MOSFETs N-Ch MOS 12A 600V 45W 1800pF 0.55

ECAD Model:
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In Stock: 72

Stock:
72 Can Dispatch Immediately
Factory Lead Time:
32 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
22,90 kr. 22,90 kr.
11,71 kr. 117,10 kr.
9,85 kr. 985,00 kr.
8,50 kr. 4.250,00 kr.
8,13 kr. 8.130,00 kr.

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
600 V
12 A
550 mOhms
- 30 V, 30 V
2 V
38 nC
- 55 C
+ 150 C
45 W
Enhancement
MOSVII
Tube
Brand: Toshiba
Configuration: Single
Product Type: MOSFETs
Series: TK12A60D
Factory Pack Quantity: 50
Subcategory: Transistors
Transistor Type: 1 N-Channel
Unit Weight: 2 g
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Attributes selected: 0

TARIC:
8542399000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
MXHTS:
8542399901
ECCN:
EAR99

π-MOS VII MOSFETs

Toshiba π-MOS VII MOSFETs are 10V Gate Drive, single N-channel devices, combining π-MOS technology with a planar process to provide a wide selection of voltage and RDS(ON) ratings. These high-voltage MOSFETs offer a drain-source voltage range of 250V up to 650V and a drain current range from 2A to 20A. Vishay π-MOS VII MOSFETs are offered in TO-220-3 and TO-252 through-hole packages and compact DPAK-3 and PW-Mold-3 surface mount packages.