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SSM3J377R,LF

Name: Toshiba SSM3J377R,LF
Brand: Toshiba
SKU: 757-SSM3J377RLF
Price: 2.18 DKK
Availability: InStock

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Mouser No:

757-SSM3J377RLF

Mfr. No:

SSM3J377R,LF

Mfr.:

Toshiba

Description:

MOSFETs Small Signal MOSFET P-ch Vdss:-20V Vgss:-8/+6V Id:-3.9A

Datasheet:

SSM3J377R,LF Datasheet (PDF)

ECAD Model:

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Learn more about Toshiba SSM3J377R,LF

In Stock: 8.377

Stock:: 8.377 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+47,00 kr.)

Pricing (DKK)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	2,18 kr.	2,18 kr.
	1,35 kr.	13,50 kr.
	0,85 kr.	85,00 kr.
	0,627 kr.	313,50 kr.
	0,545 kr.	545,00 kr.
Full Reel (Order in multiples of 3000)
	0,448 kr.	1.344,00 kr.
	0,403 kr.	2.418,00 kr.
	0,343 kr.	3.087,00 kr.
	0,336 kr.	8.064,00 kr.

† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-23F-3
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	3.9 A
Rds On - Drain-Source Resistance:	93 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 6 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	4.6 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	U-MOSVI
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Single
Forward Transconductance - Min:	2.8 S
Product Type:	MOSFETs
Series:	SSM3J377R
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	46.2 ns
Typical Turn-On Delay Time:	12 ns
Unit Weight:	11 mg

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Toshiba Electronic Devices & Storage Corporation Automotive products 
may be used as engineering samples, however; they are not intended for 
volume automotive production or reliability testing without prior 
approval by Toshiba Semiconductor and Storage. 
Please contact a Mouser Technical Sales Representative for 
further assistance.
5-0320-2

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Datasheet

SSM3J377R,LF Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

U-MOSVI Small Signal MOSFETs

Toshiba U-MOSVI Small Signal MOSFETs offer a variety of gate drive voltages required for many different types of mobile devices. They are available in single, dual, N-channel, P-channel and various voltage versions, providing a wide variety of options for designers. Each MOSFET addresses the need to support high-current charging with low voltage and low R_DS(on) requirements. The compact packages and and low voltage operation make Toshiba U-MOSVI Small Signal MOSFETs an ideal solution for high-density packaging requirements in smart phones and game consoles.

Automotive Solutions

Toshiba Automotive Solutions offer various automotive semiconductor devices designed to improve driving safety. This includes advanced driver assistance systems (ADAS) using an image recognition processor. Toshiba provides leading-edge semiconductor technologies from a future perspective to deliver comprehensive driver assistance solutions. These solutions, including self-driving, emulate human eyes and other intricate human senses.