TPS28226DR

Texas Instruments
595-TPS28226DR
TPS28226DR

Mfr.:

Description:
Gate Drivers Hi Fre 4A Sink Synch MOSFET Driver A 595 A 595-TPS28226D

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In Stock: 2.336

Stock:
2.336 Can Dispatch Immediately
Factory Lead Time:
6 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (DKK)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
8,95 kr. 8,95 kr.
7,31 kr. 73,10 kr.
6,61 kr. 165,25 kr.
5,91 kr. 591,00 kr.
5,56 kr. 1.390,00 kr.
5,34 kr. 2.670,00 kr.
5,15 kr. 5.150,00 kr.
Full Reel (Order in multiples of 2500)
4,76 kr. 11.900,00 kr.
4,70 kr. 35.250,00 kr.
† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Alternative Packaging

Mfr. Part No.:
Packaging:
Tube
Availability:
In Stock
Price:
10,37 kr.
Min:
1

Similar Product

Texas Instruments TPS28226D
Texas Instruments
Gate Drivers Hi Fre 4A Sink Synch MOSFET Driver
End of Life: Scheduled for obsolescence and will be discontinued by the manufacturer.

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
MOSFET Gate Drivers
Half-Bridge
SMD/SMT
SOIC-8
2 Driver
2 Output
4 A
6.8 V
8 V
10 ns
5 ns
- 40 C
+ 125 C
TPS28226
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Features: Synchronous Rectification
Maximum Turn-Off Delay Time: 14 ns
Pd - Power Dissipation: 1.25 W
Product Type: Gate Drivers
Factory Pack Quantity: 2500
Subcategory: PMIC - Power Management ICs
Technology: Si
Unit Weight: 72,600 mg
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TARIC:
8542399000
CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
JPHTS:
854239099
MXHTS:
8542399901
ECCN:
EAR99

TPS28226 8-Pin Sink Synchronous MOSFET Drivers

Texas Instruments TPS28226 8-Pin High-Frequency 4A Sink Synchronous MOSFET Drivers is optimized for a variety of high-current one and multi-phase DC-to-DC converters. The Texas Instruments TPS28226 MOSFET Drivers have a small-size and low EMI emissions, providing a high-efficiency solution. Efficiency is achieved by up to 8.8V gate drive voltage, 14ns adaptive dead-time control, 14ns propagation delays, and high-current 2A source with 4A sink drive capability. The 0.4Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold. This feature ensures no shoot-through current at high dV/dt phase node transitions. Charged by an internal diode, the bootstrap capacitor allows the use of N-channel MOSFETs in a half-bridge configuration.