TPS2379DDA

Texas Instruments
595-TPS2379DDA
TPS2379DDA

Mfr.:

Description:
Power Switch ICs - POE/LAN PoE High-Pwr PD Inte rface A 595-TPS2379 A 595-TPS2379DDAR

Datasheet:
ECAD Model:
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In Stock: 5.147

Stock:
5.147 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
14,17 kr. 14,17 kr.
10,59 kr. 105,90 kr.
8,88 kr. 222,00 kr.
8,43 kr. 632,25 kr.
8,36 kr. 2.508,00 kr.

Alternative Packaging

Mfr. Part No.:
TPS2379DDAR
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
13,58 kr.
Min:
1

Similar Product

Texas Instruments TPS2379DDAR
Texas Instruments
Power Switch ICs - POE/LAN PoE High-Pwr PD Inte rface A 595-TPS2379 A 595-TPS2379DDA
Compare With Current Part

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Power Switch ICs - POE/LAN
RoHS:  
Powered Device - PD
802.3at
850 mA
750 mOhms
0 V to 57 V
- 40 C
+ 85 C
SMD/SMT
SO-PowerPad-8
Tube
Brand: Texas Instruments
Development Kit: TPS2379EVM-106
Moisture Sensitive: Yes
Operating Supply Current: 285 uA
Product Type: Power Switch ICs - POE / LAN
Series: TPS2379
Factory Pack Quantity: 75
Subcategory: Switch ICs
Unit Weight: 506,600 mg
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Attributes selected: 0

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TARIC:
8542399000
CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
JPHTS:
854239099
MXHTS:
8542399901
ECCN:
EAR99

TPS2378 / TPS2379 High-Power PD Interface ICs

Texas Instruments TPS2378 / TPS2379 IEEE 802.3at PoE High-Power PD Interface ICs are 8-pin devices containing all the features needed to implement an IEEE802.3at type-2 powered device (PD). The low 0.5 Ω internal switch resistance, combined with the enhanced thermal dissipation of the PowerPAD™ package, enables these TI controllers to continuously handle up to 0.85 A. TPS2378 features an auxiliary power detect (APD) input, providing priority for an external power adapter. TPS2379 supports higher-power applications through the use of an external pass transistor.

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