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LMG3422R050RQZR

Name: Texas Instruments LMG3422R050RQZR
Brand: Texas Instruments
SKU: 595-LMG3422R050RQZR
Price: 56.32 DKK
Availability: OutOfStock

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Mouser No:

595-LMG3422R050RQZR

Mfr. No:

LMG3422R050RQZR

Mfr.:

Texas Instruments

Description:

Gate Drivers 600-V 50-m? GaN FET with integrated driv

Datasheet:

LMG3422R050RQZR Datasheet

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Factory Lead Time:: 12 Weeks Estimated factory production time.

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Minimum: 2000 Multiples: 2000

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 2000)
	56,32 kr.	112.640,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	Gate Drivers
Delivery Restrictions:	This product may require additional documentation to export from the United States.
RoHS:
Product:	Half-Bridge Drivers
Type:	High-Side, Low-Side
Mounting Style:	SMD/SMT
Package/Case:	VQFN-54
Number of Drivers:	1 Driver
Number of Outputs:	1 Output
Supply Voltage - Min:	7.5 V
Supply Voltage - Max:	18 V
Configuration:	Non-Inverting
Rise Time:	2.5 ns
Fall Time:	21 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	LMG3422R050
Packaging:	Reel
Brand:	Texas Instruments
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	Not Available
Moisture Sensitive:	Yes
Product Type:	Gate Drivers
Factory Pack Quantity:	2000
Subcategory:	PMIC - Power Management ICs
Technology:	GaN
Tradename:	GaN

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Datasheet

LMG3422R050RQZR Datasheet

PCN

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USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: 3A001.A.2.A

LMG342xR050 600V 50mΩ GaN FETs

Texas Instruments LMG342xR050 600V 50mΩ GaN FETs with integrated driver and protection enable designers to achieve new power density and efficiency levels in power electronics systems. The LMG342xR050 integrates a silicon driver that enables switching speeds up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance.