CSD86336Q3DT

Texas Instruments
595-CSD86336Q3DT
CSD86336Q3DT

Mfr.:

Description:
MOSFETs 25-V N channel sync hronous buck NexFET A 595-CSD86336Q3D

Datasheet:
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Learn more about Texas Instruments CSD86336Q3DT

Availability

Stock:
Non-Stocked
Factory Lead Time:
12 Weeks Estimated factory production time.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 250)

Pricing (DKK)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
17,46 kr. 17,46 kr.
11,26 kr. 112,60 kr.
6,86 kr. 686,00 kr.
Full Reel (Order in multiples of 250)
6,86 kr. 1.715,00 kr.
5,94 kr. 2.970,00 kr.
5,87 kr. 5.870,00 kr.
† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:
CSD86336Q3D
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
13,06 kr.
Min:
1

Similar Product

Texas Instruments CSD86336Q3D
Texas Instruments
MOSFETs 25-V N channel sync hronous buck NexFET A 595-CSD86336Q3DT
Compare With Current Part

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
VSON-CLIP-8
N-Channel
1 Channel
25 V
20 A
9.1 mOhms
- 8 V, 8 V
1.1 V
3.8 nC
- 55 C
+ 150 C
6 W
Enhancement
NexFET
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: PH
Fall Time: 2 ns
Forward Transconductance - Min: 40 S
Product Type: MOSFETs
Rise Time: 10 ns
Series: CSD86336Q3D
Factory Pack Quantity: 250
Subcategory: Transistors
Transistor Type: Power MOSFET
Typical Turn-Off Delay Time: 7 ns
Typical Turn-On Delay Time: 5 ns
Unit Weight: 99,500 mg
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Attributes selected: 0

Datasheet

SPICE Models

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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
MXHTS:
85412999
ECCN:
EAR99

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

NexFET Power Block ICs

Texas Instruments NexFET Power Block ICs are optimized driver ICs with Dual NexFET MOSFETs used in the devices. This delivers higher efficiency in a typical high current POL design. These devices use half the PCB area versus other discrete 3x3 QFN package MOSFETs, which improves power density. With ultra-low Qg & Qgd, these devices enable a higher switching frequency with up to double frequency for the same power loss versus competitor's devices. This feature provides improved transient response for fewer output capacitors that will be needed. There is a size reduction, by up to 1/2, for the output filter (caps & inductor). Texas Instruments NexFET Power Block ICs come with a unique ground pad lead frame and pinout, which simplifies the customer's layout and improves operating and thermal performance.

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