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CSD19536KCS

Name: Texas Instruments CSD19536KCS
Brand: Texas Instruments
SKU: 595-CSD19536KCS
Price: 34.32 DKK
Availability: OutOfStock

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Mouser No:

595-CSD19536KCS

Mfr. No:

CSD19536KCS

Mfr.:

Texas Instruments

Description:

MOSFETs 100V N-CH NexFET Pwr MOSFET

Datasheet:

CSD19536KCS Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD19536KCS

Availability

Stock:: 0

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On Order:: 1.598

Expected 26/02/2026

1.250

Expected 01/06/2026
Factory Lead Time:: 12

Weeks Estimated factory production time for quantities greater than shown.

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	34,32 kr.	34,32 kr.
	22,01 kr.	220,10 kr.
	20,07 kr.	2.007,00 kr.
	17,16 kr.	8.580,00 kr.
	16,71 kr.	16.710,00 kr.
	15,82 kr.	39.550,00 kr.
	15,59 kr.	77.950,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	259 A
Rds On - Drain-Source Resistance:	2.7 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.1 V
Qg - Gate Charge:	118 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	375 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Tube
Brand:	Texas Instruments
Configuration:	Single
Fall Time:	5 ns
Forward Transconductance - Min:	307 S
Product Type:	MOSFETs
Rise Time:	8 ns
Series:	CSD19536KCS
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	38 ns
Typical Turn-On Delay Time:	14 ns
Unit Weight:	2 g

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Datasheet

CSD19536KCS Datasheet

Images

PCN

SPICE Models

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.