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CSD19535KTTT

Name: Texas Instruments CSD19535KTTT
Brand: Texas Instruments
SKU: 595-CSD19535KTTT
Price: 37.37 DKK
Availability: InStock

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Mouser No:

595-CSD19535KTTT

Mfr. No:

CSD19535KTTT

Mfr.:

Texas Instruments

Description:

MOSFETs 100V N-Channel NexFE T Power MOSFET A 59 A 595-CSD19535KTT

Datasheet:

CSD19535KTTT Datasheet

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More Information

Learn more about Texas Instruments CSD19535KTTT

In Stock: 519

Stock:: 519 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 50)

Cut Tape

MouseReel™ (+47,00 kr.)

Pricing (DKK)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	37,37 kr.	37,37 kr.
	17,68 kr.	176,80 kr.
Full Reel (Order in multiples of 50)
	17,68 kr.	884,00 kr.
	16,41 kr.	1.641,00 kr.

† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD19535KTT

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

26,78 kr.

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD19535KTT

Description:

MOSFETs 100-V N channel Nex FET power MOSFET s A A 595-CSD19535KTTT

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	200 A
Rds On - Drain-Source Resistance:	3.4 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.2 V
Qg - Gate Charge:	75 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	300 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Fall Time:	15 ns
Forward Transconductance - Min:	301 S
Moisture Sensitive:	Yes
Product Type:	MOSFETs
Rise Time:	18 ns
Series:	CSD19535KTT
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	21 ns
Typical Turn-On Delay Time:	9 ns
Unit Weight:	2 g

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.