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CSD17581Q3AT

Name: Texas Instruments CSD17581Q3AT
Brand: Texas Instruments
SKU: 595-CSD17581Q3AT
Price: 11.71 DKK
Availability: InStock

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Mouser No:

595-CSD17581Q3AT

Mfr. No:

CSD17581Q3AT

Mfr.:

Texas Instruments

Description:

MOSFETs 30V N-Channel NexFET A 595-CSD17581Q3A A A 595-CSD17581Q3A

Datasheet:

CSD17581Q3AT Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD17581Q3AT

In Stock: 1.487

Stock:: 1.487 Can Dispatch Immediately

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Factory Lead Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 250)

Cut Tape

MouseReel™ (+47,00 kr.)

Pricing (DKK)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	11,71 kr.	11,71 kr.
	7,45 kr.	74,50 kr.
	4,30 kr.	430,00 kr.
Full Reel (Order in multiples of 250)
	4,30 kr.	1.075,00 kr.
	3,69 kr.	1.845,00 kr.
	3,33 kr.	3.330,00 kr.
	3,20 kr.	8.000,00 kr.
	3,19 kr.	15.950,00 kr.
	3,07 kr.	30.700,00 kr.

† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD17581Q3A

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

6,99 kr.

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD17581Q3A

Description:

MOSFETs 30-V N channel NexF ET power MOSFET si A A 595-CSD17581Q3AT

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	VSONP-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	60 A
Rds On - Drain-Source Resistance:	3.9 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	54 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	63 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Country of Assembly:	CN
Country of Diffusion:	CN
Country of Origin:	CN
Fall Time:	10 ns
Forward Transconductance - Min:	78 S
Product Type:	MOSFETs
Rise Time:	23 ns
Series:	CSD17581Q3A
Factory Pack Quantity:	250
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	23 ns
Typical Turn-On Delay Time:	12 ns
Unit Weight:	27,700 mg

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

CSD17581Q3A NexFET™ Power MOSFET

Texas Instruments CSD17581Q3A NexFET™ Power MOSFET is an N-Channel 30V, 3.2mΩ power MOSFET. This device is designed to minimise losses in power conversion applications. This MOSFET offers low Qg, Qgd, R_DS(on) and low thermal resistance. These features make this device ideal for point-of-load synchronous buck converter applications in networking, telecoms, and computing systems. This device also works well for motor control applications and is optimised for control FET applications.
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