CSD17484F4T

Texas Instruments
595-CSD17484F4T
CSD17484F4T

Mfr.:

Description:
MOSFETs 30V N-Ch FemtoFET MO SFET A 595-CSD17484 A 595-CSD17484F4

ECAD Model:
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Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
5.500
Expected 03/03/2026
Factory Lead Time:
12
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 250)

Pricing (DKK)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
8,95 kr. 8,95 kr.
5,66 kr. 56,60 kr.
3,26 kr. 326,00 kr.
Full Reel (Order in multiples of 250)
3,26 kr. 815,00 kr.
2,78 kr. 1.390,00 kr.
2,49 kr. 2.490,00 kr.
2,39 kr. 5.975,00 kr.
2,36 kr. 11.800,00 kr.
† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Alternative Packaging

Mfr. Part No.:
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
2,69 kr.
Min:
1

Similar Product

Texas Instruments CSD17484F4
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MOSFETs 30-V N channel NexF ET power MOSFET si A A 595-CSD17484F4T

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
PICOSTAR-3
N-Channel
1 Channel
30 V
3 A
128 mOhms
- 12 V, 12 V
650 mV
920 pC
- 55 C
+ 150 C
500 mW
Enhancement
FemtoFET
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 4 ns
Forward Transconductance - Min: 4 S
Product Type: MOSFETs
Rise Time: 1 ns
Series: CSD17484F4
Factory Pack Quantity: 250
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 11 ns
Typical Turn-On Delay Time: 3 ns
Unit Weight: 0,400 mg
Products found:
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Attributes selected: 0

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TARIC:
8541290000
CNHTS:
8541210000
CAHTS:
8541290000
USHTS:
8541210095
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

FemtoFET Power MOSFETs

Texas Instruments FemtoFET Power MOSFETs offer an ultra small footprint (0402 case size) with ultra-low resistance (70% less than competitors). These MOSFETs include ultra low Qg, Qgd specifications and have an optimized ESD rating. They are available in a land grid array (LGA) package. This package maximizes silicon content which makes them ideal for space-constrained applications. These power MOSFETs offer low power dissipation and low switching losses for improved light load performance. Typical applications for these devices include handheld, mobile, load switching, general purpose switching, and battery applications.