CSD17483F4T

Texas Instruments
595-CSD17483F4T
CSD17483F4T

Mfr.:

Description:
MOSFETs 30V N-Ch FemtoFET MO SFET A 595-CSD17483 A 595-CSD17483F4

Datasheet:
ECAD Model:
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In Stock: 2.732

Stock:
2.732 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 250)

Pricing (DKK)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
8,95 kr. 8,95 kr.
5,57 kr. 55,70 kr.
3,22 kr. 322,00 kr.
Full Reel (Order in multiples of 250)
3,22 kr. 805,00 kr.
2,74 kr. 1.370,00 kr.
2,45 kr. 2.450,00 kr.
2,36 kr. 5.900,00 kr.
2,32 kr. 11.600,00 kr.
† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:
CSD17483F4
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
2,44 kr.
Min:
1

Similar Product

Texas Instruments CSD17483F4
Texas Instruments
MOSFETs 30V N-CH Pwr MOSFET A 595-CSD17483F4T A A 595-CSD17483F4T
Compare With Current Part

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
PICOSTAR-3
N-Channel
1 Channel
30 V
1.5 A
230 mOhms
- 12 V, 12 V
850 mV
1.01 nC
- 55 C
+ 150 C
500 mW
Enhancement
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Configuration: Single
Country of Assembly: PH
Country of Diffusion: CN
Country of Origin: CN
Fall Time: 3.4 ns
Forward Transconductance - Min: 2.4 S
Product Type: MOSFETs
Rise Time: 1.3 ns
Series: CSD17483F4
Factory Pack Quantity: 250
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 10.6 ns
Typical Turn-On Delay Time: 3.3 ns
Unit Weight: 0,400 mg
Products found:
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Attributes selected: 0

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TARIC:
8541210000
CNHTS:
8541210000
CAHTS:
8541290000
USHTS:
8541210095
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412101
ECCN:
EAR99

CSD17483F4 FemtoFET MOSFET

Texas Instruments CSD17483F4 FemtoFET MOSFET is built using FemtoFET technology and is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

FemtoFET Power MOSFETs

Texas Instruments FemtoFET Power MOSFETs offer an ultra small footprint (0402 case size) with ultra-low resistance (70% less than competitors). These MOSFETs include ultra low Qg, Qgd specifications and have an optimized ESD rating. They are available in a land grid array (LGA) package. This package maximizes silicon content which makes them ideal for space-constrained applications. These power MOSFETs offer low power dissipation and low switching losses for improved light load performance. Typical applications for these devices include handheld, mobile, load switching, general purpose switching, and battery applications.

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