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CSD17381F4

Name: Texas Instruments CSD17381F4
Brand: Texas Instruments
SKU: 595-CSD17381F4
Price: 2.57 DKK
Availability: InStock

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Mouser No:

595-CSD17381F4

Mfr. No:

CSD17381F4

Mfr.:

Texas Instruments

Description:

MOSFETs N-CH NexFET Pwr MOSF ET A 595-CSD17381F4 A 595-CSD17381F4T

Datasheet:

CSD17381F4 Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD17381F4

In Stock: 1.504

Stock:: 1.504

Can Dispatch Immediately

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On Order:: 6.000

Expected 02/04/2026
Factory Lead Time:: 12

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- kr.

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+47,00 kr.)

Pricing (DKK)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	2,57 kr.	2,57 kr.
	1,59 kr.	15,90 kr.
	1,00 kr.	100,00 kr.
	0,753 kr.	376,50 kr.
	0,656 kr.	656,00 kr.
Full Reel (Order in multiples of 3000)
	0,56 kr.	1.680,00 kr.
	0,492 kr.	2.952,00 kr.
	0,425 kr.	3.825,00 kr.
	0,418 kr.	10.032,00 kr.

† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD17381F4T

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

8,95 kr.

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD17381F4T

Description:

MOSFETs 30V N-Ch FemtoFET MO SFET A 595-CSD17381 A 595-CSD17381F4

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PICOSTAR-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	3.1 A
Rds On - Drain-Source Resistance:	109 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	650 mV
Qg - Gate Charge:	1.04 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	500 mW
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Development Kit:	CSD1FNCHEVM-889
Fall Time:	3.6 ns
Forward Transconductance - Min:	4.8 S
Product Type:	MOSFETs
Rise Time:	1.4 ns
Series:	CSD17381F4
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	10.8 ns
Typical Turn-On Delay Time:	3.4 ns
Unit Weight:	0,400 mg

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SPICE Models

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TARIC:: 8541210000
CNHTS:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
KRHTS:: 8541299000
MXHTS:: 8541210100
ECCN:: EAR99

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

FemtoFET Power MOSFETs

Texas Instruments FemtoFET Power MOSFETs offer an ultra small footprint (0402 case size) with ultra-low resistance (70% less than competitors). These MOSFETs include ultra low Qg, Qgd specifications and have an optimized ESD rating. They are available in a land grid array (LGA) package. This package maximizes silicon content which makes them ideal for space-constrained applications. These power MOSFETs offer low power dissipation and low switching losses for improved light load performance. Typical applications for these devices include handheld, mobile, load switching, general purpose switching, and battery applications.