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CSD16323Q3

Name: Texas Instruments CSD16323Q3
Brand: Texas Instruments
SKU: 595-CSD16323Q3
Price: 11.04 DKK
Availability: InStock

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Mouser No:

595-CSD16323Q3

Mfr. No:

CSD16323Q3

Mfr.:

Texas Instruments

Description:

MOSFETs N-Ch NexFET Pwr MOSF ET

Datasheet:

CSD16323Q3 Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD16323Q3

In Stock: 61

Stock:: 61

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On Order:: 15.000

Expected 15/05/2026

22.500

Expected 22/05/2026
Factory Lead Time:: 12

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- kr.

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+47,00 kr.)

Pricing (DKK)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	11,04 kr.	11,04 kr.
	6,99 kr.	69,90 kr.
	4,66 kr.	466,00 kr.
	3,67 kr.	1.835,00 kr.
	3,36 kr.	3.360,00 kr.
Full Reel (Order in multiples of 2500)
	3,00 kr.	7.500,00 kr.
	2,81 kr.	14.050,00 kr.

† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	VSON-CLIP-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	25 V
Id - Continuous Drain Current:	60 A
Rds On - Drain-Source Resistance:	4.5 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 10 V
Vgs th - Gate-Source Threshold Voltage:	900 mV
Qg - Gate Charge:	6.2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	74 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Fall Time:	6.3 ns
Product Type:	MOSFETs
Rise Time:	15 ns
Series:	CSD16323Q3
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel Power MOSFET
Typical Turn-Off Delay Time:	13 ns
Typical Turn-On Delay Time:	5.3 ns
Unit Weight:	43,700 mg

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Power Management Guide 2018 (Rev. R)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.