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CSD16321Q5

Name: Texas Instruments CSD16321Q5
Brand: Texas Instruments
SKU: 595-CSD16321Q5
Price: 15.67 DKK
Availability: InStock

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Mouser No:

595-CSD16321Q5

Mfr. No:

CSD16321Q5

Mfr.:

Texas Instruments

Description:

MOSFETs N-Channel NexFET Pow er MOSFET

Datasheet:

CSD16321Q5 Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD16321Q5

In Stock: 3.648

Stock:: 3.648 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+47,00 kr.)

Pricing (DKK)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	15,67 kr.	15,67 kr.
	10,00 kr.	100,00 kr.
	6,86 kr.	686,00 kr.
	5,68 kr.	2.840,00 kr.
	5,39 kr.	5.390,00 kr.
Full Reel (Order in multiples of 2500)
	4,62 kr.	11.550,00 kr.
	4,58 kr.	22.900,00 kr.
	4,47 kr.	44.700,00 kr.

† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD16321Q5T

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

12,91 kr.

Min:

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	VSON-CLIP-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	25 V
Id - Continuous Drain Current:	5 A
Rds On - Drain-Source Resistance:	2.4 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	900 mV
Qg - Gate Charge:	14 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	113 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Development Kit:	TPS51218EVM-49, TPS40304EVM-353
Fall Time:	17 ns
Forward Transconductance - Min:	150 S
Product Type:	MOSFETs
Rise Time:	15 ns
Series:	CSD16321Q5
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	27 ns
Typical Turn-On Delay Time:	9 ns
Unit Weight:	117,400 mg

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Power Management Guide 2018 (Rev. R)

SPICE Models

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.