CSD13381F4

Texas Instruments
595-CSD13381F4
CSD13381F4

Mfr.:

Description:
MOSFETs 12V N-CH Pwr MOSFET A 595-CSD13381F4T A 595-CSD13381F4T

Datasheet:
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Learn more about Texas Instruments CSD13381F4

In Stock: 21.354

Stock:
21.354 Can Dispatch Immediately
Factory Lead Time:
6 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (DKK)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
2,31 kr. 2,31 kr.
1,72 kr. 17,20 kr.
0,985 kr. 98,50 kr.
0,671 kr. 335,50 kr.
0,53 kr. 530,00 kr.
Full Reel (Order in multiples of 3000)
0,433 kr. 1.299,00 kr.
0,38 kr. 2.280,00 kr.
0,328 kr. 2.952,00 kr.
0,306 kr. 7.344,00 kr.
† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:
CSD13381F4T
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
2,63 kr.
Min:
1

Similar Product

Texas Instruments CSD13381F4T
Texas Instruments
MOSFETs 12V N-Ch FemtoFET MO SFET A 595-CSD13381 A 595-CSD13381F4
Compare With Current Part

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
PICOSTAR-3
N-Channel
1 Channel
12 V
2.1 A
180 mOhms
- 8 V, 8 V
650 mV
1.06 nC
- 55 C
+ 150 C
500 mW
Enhancement
NexFET
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Configuration: Single
Fall Time: 3.8 ns
Product Type: MOSFETs
Rise Time: 1.5 ns
Series: CSD13381F4
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 N-Channel FemtoFET MOSFET
Typical Turn-Off Delay Time: 11 ns
Typical Turn-On Delay Time: 3.7 ns
Unit Weight: 0,400 mg
Products found:
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Attributes selected: 0

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TARIC:
8542399000
CNHTS:
8541210000
CAHTS:
8541290000
USHTS:
8541210095
JPHTS:
854239099
KRHTS:
8541299000
MXHTS:
8542399901
ECCN:
EAR99

FemtoFET Power MOSFETs

Texas Instruments FemtoFET Power MOSFETs offer an ultra small footprint (0402 case size) with ultra-low resistance (70% less than competitors). These MOSFETs include ultra low Qg, Qgd specifications and have an optimized ESD rating. They are available in a land grid array (LGA) package. This package maximizes silicon content which makes them ideal for space-constrained applications. These power MOSFETs offer low power dissipation and low switching losses for improved light load performance. Typical applications for these devices include handheld, mobile, load switching, general purpose switching, and battery applications.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

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