BUF08630RGWT

Texas Instruments
595-BUF08630RGWT
BUF08630RGWT

Mfr.:

Description:
LCD Gamma Buffers Programmable Gamma- Voltage Gen A 595-BU A 595-BUF08630RGWR

Datasheet:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
12 Weeks Estimated factory production time.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 250)

Pricing (DKK)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
37,37 kr. 37,37 kr.
28,65 kr. 286,50 kr.
26,41 kr. 660,25 kr.
24,10 kr. 2.410,00 kr.
Full Reel (Order in multiples of 250)
22,75 kr. 5.687,50 kr.
21,86 kr. 10.930,00 kr.
21,26 kr. 21.260,00 kr.
21,04 kr. 52.600,00 kr.
5.000 Quote
† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: LCD Gamma Buffers
RoHS:  
BUF08630
8 Channel
45 V/us
20 V
9 V
940 uA
- 40 C
+ 85 C
SMD/SMT
VQFN-20
Reel
Cut Tape
MouseReel
Amplifier Type: Gamma Buffer,VCOM
Brand: Texas Instruments
Development Kit: BUF08630EVM
Moisture Sensitive: Yes
Product: LCD Gamma Buffers
Product Type: LCD Gamma Buffers
Factory Pack Quantity: 250
Subcategory: Amplifier ICs
Unit Weight: 70 mg
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Attributes selected: 0

Datasheet

Application Notes

Images

Models

PCN

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CNHTS:
8542319000
CAHTS:
8542390000
USHTS:
8542390070
JPHTS:
8542330996
KRHTS:
8532331000
MXHTS:
8542399999
ECCN:
EAR99

BUF08630 Programmable Gamma-Voltage Generators

Texas Instruments BUF08630 programmable gamma-voltage generators offer eight programmable gamma channels and one programmable VCOM channel. TI BUF08630 programmable gamma-voltage generators have two separate memory banks, allowing simultaneous storage of two different gamma curves to facilitate switching between gamma curves. The final gamma and VCOM values can be stored in the on-chip, nonvolatile memory. To allow for programming errors or liquid crystal display (LCD) panel rework, the TI BUF08630 supports up to 16 write operations to the on-chip memory.

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