STWA65N65DM2AG

STMicroelectronics
511-STWA65N65DM2AG
STWA65N65DM2AG

Mfr.:

Description:
MOSFETs Automotive-grade N-channel 650 V, 42 mOhm typ., 60 A MDmesh DM2 Power MOSFET in

ECAD Model:
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In Stock: 447

Stock:
447 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
64,45 kr. 64,45 kr.
44,39 kr. 443,90 kr.
34,02 kr. 3.402,00 kr.

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Through Hole
MDmesh
Tube
Brand: STMicroelectronics
Channel Mode: Enhancement
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 11.5 ns
Id - Continuous Drain Current: 60 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Number of Channels: 1 Channel
Package/Case: TO-247-3
Pd - Power Dissipation: 446 W
Product Type: MOSFETs
Qg - Gate Charge: 120 nC
Qualification: AEC-Q101
Rds On - Drain-Source Resistance: 50 mOhms
Rise Time: 13.5 ns
Factory Pack Quantity: 600
Subcategory: Transistors
Technology: Si
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 114 ns
Typical Turn-On Delay Time: 33 ns
Vds - Drain-Source Breakdown Voltage: 650 V
Vgs - Gate-Source Voltage: - 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Unit Weight: 6 g
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TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99