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STW58N65DM2AG

Name: STMicroelectronics STW58N65DM2AG
Brand: STMicroelectronics
SKU: 511-STW58N65DM2AG
Price: 77.58 DKK
Availability: InStock

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Mouser No:

511-STW58N65DM2AG

Mfr. No:

STW58N65DM2AG

Mfr.:

STMicroelectronics

Description:

MOSFETs Automotive-grade N-channel 650 V, 0.058 Ohm typ., 48 A MDmesh DM2 Power MOSFET i

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Datasheet:

STW58N65DM2AG Datasheet (PDF)

ECAD Model:

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In Stock: 454

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 454 will be subject to minimum order requirements.

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	77,58 kr.	77,58 kr.
	63,11 kr.	631,10 kr.
	52,59 kr.	5.259,00 kr.
	39,84 kr.	23.904,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	48 A
Rds On - Drain-Source Resistance:	65 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	88 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	360 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	7.7 ns
Product Type:	MOSFETs
Rise Time:	31 ns
Series:	STW58N65DM2AG
Factory Pack Quantity:	600
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	157 ns
Typical Turn-On Delay Time:	28 ns
Unit Weight:	6 g

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Datasheet

STW58N65DM2AG Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Automotive-Grade N-Channel MDmesh DM2 MOSFETs

STMicroelectronics Automotive-Grade N-Channel MDmesh DM2 Power MOSFETs are high-voltage with very low recovery charge (Qrr) and time (trr) combined with low R_DS(on). They are suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.