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STU7N65M2

Name: STMicroelectronics STU7N65M2
Brand: STMicroelectronics
SKU: 511-STU7N65M2
Price: 12.98 DKK
Availability: InStock

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Mouser No:

511-STU7N65M2

Mfr. No:

STU7N65M2

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 650 V, 0.98 Ohm typ., 5 A MDmesh M2 Power MOSFET in a IPAK package

Complete Your Design

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

STU7N65M2 Datasheet (PDF)

ECAD Model:

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In Stock: 1.141

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	12,98 kr.	12,98 kr.
	8,28 kr.	82,80 kr.
	5,71 kr.	571,00 kr.
	4,84 kr.	2.420,00 kr.
	4,19 kr.	4.190,00 kr.
	3,85 kr.	11.550,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-251-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	5 A
Rds On - Drain-Source Resistance:	1.15 Ohms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	9 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	60 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	20 ns
Product Type:	MOSFETs
Rise Time:	20 ns
Series:	STU7N65M2
Factory Pack Quantity:	3000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	30 ns
Typical Turn-On Delay Time:	8 ns
Unit Weight:	340 mg

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ST NCNR & NON Warrantied

Stock on hand has no manufacture warranty.

If the end customer requires additional support please
process the request through your local Mouser
sales representative.

5-1013-36

Filter Document:

Datasheet

STU7N65M2 Datasheet (PDF)

EOL

Product Discontinuation Notification 2025-4-3 (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.