STU6N65M2

STMicroelectronics
511-STU6N65M2
STU6N65M2

Mfr.:

Description:
MOSFETs N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package
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In Stock: 45

Stock:
45 Can Dispatch Immediately
Factory Lead Time:
14 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
10,29 kr. 10,29 kr.
5,36 kr. 53,60 kr.
3,99 kr. 399,00 kr.
3,32 kr. 1.660,00 kr.
2,80 kr. 2.800,00 kr.
2,77 kr. 8.310,00 kr.

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-251-3
N-Channel
1 Channel
650 V
4 A
1.35 Ohms
- 25 V, 25 V
3 V
9.8 nC
- 55 C
+ 150 C
60 W
Enhancement
MDmesh
Tube
Brand: STMicroelectronics
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 20 ns
Product Type: MOSFETs
Rise Time: 7 ns
Series: STU6N65M2
Factory Pack Quantity: 3000
Subcategory: Transistors
Typical Turn-Off Delay Time: 6.5 ns
Typical Turn-On Delay Time: 19 ns
Unit Weight: 340 mg
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Attributes selected: 0 

                        
ST NCNR & NON Warrantied

Stock on hand has no manufacture warranty.

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5-1013-36

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.

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