STPSC20G12WL

STMicroelectronics
511-STPSC20G12WL
STPSC20G12WL

Mfr.:

Description:
SiC Schottky Diodes 1200 V, 20 A High surge Silicon Carbide Power Schottky Diode

ECAD Model:
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In Stock: 878

Stock:
878 Can Dispatch Immediately
Factory Lead Time:
25 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
69,45 kr. 69,45 kr.
38,64 kr. 386,40 kr.
37,82 kr. 3.782,00 kr.
36,40 kr. 21.840,00 kr.
35,51 kr. 42.612,00 kr.
25.200 Quote

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: SiC Schottky Diodes
RoHS:  
Through Hole
DO-247-2
Single
20 A
1.2 kV
1.35 V
180 A
10 uA
- 55 C
+ 175 C
Tube
Brand: STMicroelectronics
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 600
Subcategory: Diodes & Rectifiers
Unit Weight: 6 g
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TARIC:
8541100000
CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
ECCN:
EAR99

Standard Products

STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discretes, and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of STMicroelectronics design aids, including SPICE, IBIS models, and simulation tools, is available to make adding to a design-in easy.

STPSC20G12 Silicon Carbide Power Schottky Diodes

STMicroelectronics STPSC20G12 Silicon Carbide Power Schottky Diodes are available in a DO-247 package with long leads. The STMicroelectronics STPSC20G12 is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200V rating. Thanks to the Schottky construction, no recovery is shown during turn-off, and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.