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STP80N1K1K6

Name: STMicroelectronics STP80N1K1K6
Brand: STMicroelectronics
SKU: 511-STP80N1K1K6
Price: 15.29 DKK
Availability: InStock

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Mouser No:

511-STP80N1K1K6

Mfr. No:

STP80N1K1K6

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET

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Datasheet:

STP80N1K1K6 Datasheet (PDF)

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In Stock: 1.062

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Factory Lead Time:: 13 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	15,29 kr.	15,29 kr.
	9,85 kr.	98,50 kr.
	6,74 kr.	674,00 kr.
	5,36 kr.	2.680,00 kr.
	5,03 kr.	5.030,00 kr.
	4,57 kr.	9.140,00 kr.
	4,46 kr.	22.300,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Packaging:	Tube
Brand:	STMicroelectronics
Product Type:	MOSFETs
Factory Pack Quantity:	1000
Subcategory:	Transistors
Unit Weight:	2 g

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Datasheet

STP80N1K1K6 Datasheet (PDF)

PCN

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

STP80N1K1K6 N-Channel Power MOSFET

STMicroelectronics STP80N1K1K6 N-Channel Power MOSFET uses MDmesh K6 technology, leveraging 20 years of experience in super junction technology. The STMicroelectronics STP80N1K1K6 MOSFET offers top-notch on-resistance per area and gate charge. The device is ideal for high-power density and efficient applications.

N-Channel MDmesh K6 Power MOSFETs

STMicroelectronics N-Channel MDmesh K6 Power MOSFETs are Zener-protected and 100% avalanche-tested. These power MOSFETs feature 800V minimum drain-source breakdown voltage, ±30V gate-source voltage, and -55°C to 150°C operating junction temperature range. The MDmesh K6 Power MOSFETs also feature 5V/ns peak diode recovery voltage slope, 100A/µs peak diode recovery current slope, and 120V/ns MOSFET dv/dt ruggedness. Typical applications include notebook and AIO, flyback converters, adapters for tablets, and LED lighting.