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STP45N60DM6

Name: STMicroelectronics STP45N60DM6
Brand: STMicroelectronics
SKU: 511-STP45N60DM6
Price: 44.91 DKK
Availability: InStock

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Mouser No:

511-STP45N60DM6

Mfr. No:

STP45N60DM6

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V, 0.085 Ohm typ., 30 A MDmesh DM6 Power MOSFET in a TO-220 packag

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Datasheet:

STP45N60DM6 Datasheet (PDF)

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In Stock: 1.008

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	44,91 kr.	44,91 kr.
	33,20 kr.	332,00 kr.
	26,78 kr.	2.678,00 kr.
	23,87 kr.	11.935,00 kr.
	19,32 kr.	19.320,00 kr.
	19,17 kr.	38.340,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	30 A
Rds On - Drain-Source Resistance:	99 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	3.25 V
Qg - Gate Charge:	44 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	210 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	7.3 ns
Product Type:	MOSFETs
Rise Time:	5.3 ns
Series:	STP45N60DM6
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	50 ns
Typical Turn-On Delay Time:	15 ns
Unit Weight:	2 g

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Datasheet

STP45N60DM6 Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

MDmesh DM6 N-channel Power MOSFETs

STMicroelectronics MDmesh DM6 N-channel Power MOSFETs are part of the MDmesh™ DM6 fast-recovery diodes. These automotive-grade N-channel power MOSFETs offer very low recovery charge (Q_rr) and recovery time (t_rr), combined with low R_DS(on). The DM6 power MOSFETs feature low gate charge, low input capacitance, low on-resistance, high dv/dt ruggedness, and Zener-protection. These power MOSFETs are suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.