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STP45N40DM2AG

Name: STMicroelectronics STP45N40DM2AG
Brand: STMicroelectronics
SKU: 511-STP45N40DM2AG
Price: 48.79 DKK
Availability: InStock

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Mouser No:

511-STP45N40DM2AG

Mfr. No:

STP45N40DM2AG

Mfr.:

STMicroelectronics

Description:

MOSFETs Automotive-grade N-channel 400 V, 0.063 Ohm typ., 38 A MDmesh DM2 Power MOSFET i

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Datasheet:

STP45N40DM2AG Datasheet (PDF)

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In Stock: 4.722

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	48,79 kr.	48,79 kr.
	26,56 kr.	265,60 kr.
	24,39 kr.	2.439,00 kr.
	23,72 kr.	11.860,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	400 V
Id - Continuous Drain Current:	38 A
Rds On - Drain-Source Resistance:	72 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	56 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	250 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	SG
Fall Time:	9.8 ns
Product Type:	MOSFETs
Rise Time:	6.7 ns
Series:	STP45N40DM2AG
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel Power MOSFET
Typical Turn-Off Delay Time:	68 ns
Typical Turn-On Delay Time:	20 ns
Unit Weight:	2 g

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Datasheet

STP45N40DM2AG Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Automotive-Grade N-Channel MDmesh DM2 MOSFETs

STMicroelectronics Automotive-Grade N-Channel MDmesh DM2 Power MOSFETs are high-voltage with very low recovery charge (Qrr) and time (trr) combined with low R_DS(on). They are suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.