+45 80253834

Part of the TTI Family of Specialists Contact Mouser (Sweden) +45 80253834 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

STP28NM60ND

Name: STMicroelectronics STP28NM60ND
Brand: STMicroelectronics
SKU: 511-STP28NM60ND
Price: 38.27 DKK
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

511-STP28NM60ND

Mfr. No:

STP28NM60ND

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V 0 120 Ohm typ 24 A

Complete Your Design

Datasheet:

STP28NM60ND Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about STMicroelectronics STP28NM60ND

In Stock: 990

Stock:: 990 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- kr.

Ext. Price:

-,-- kr.

Est. Tariff:

Pricing (DKK)

Qty.	Unit Price	Ext. Price
	38,27 kr.	38,27 kr.
	19,62 kr.	196,20 kr.
	18,58 kr.	1.858,00 kr.
	17,08 kr.	8.540,00 kr.
	17,01 kr.	17.010,00 kr.
	16,93 kr.	84.650,00 kr.

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	23 A
Rds On - Drain-Source Resistance:	150 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	62.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	190 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	SG
Fall Time:	27 ns
Product Type:	MOSFETs
Rise Time:	21.5 ns
Series:	STP28NM60ND
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	92 ns
Typical Turn-On Delay Time:	23.5 ns
Unit Weight:	2 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

STP28NM60ND Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

N-Channel FDmesh Power MOSFETs

STMicroelectronics N-Channel FDmesh™ Power MOSFETs are a power MOSFET which belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to STMicroelectronic's strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. These MOSFETs feature fast recovery, low input capacitance and gate charge, low gate input resistance, and extremely high dv/dt and avalanche capabilities.