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STL45N60DM6

Name: STMicroelectronics STL45N60DM6
Brand: STMicroelectronics
SKU: 511-STL45N60DM6
Price: 46.63 DKK
Availability: InStock

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Mouser No:

511-STL45N60DM6

Mfr. No:

STL45N60DM6

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V, 0.094 Ohm typ., 25 A MDmesh DM6 Power MOSFET in a PowerFLAT 8x8

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Datasheet:

STL45N60DM6 Datasheet (PDF)

ECAD Model:

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In Stock: 2.682

Stock:: 2.682 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 2682 will be subject to minimum order requirements.

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Minimum: 1 Multiples: 1

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Ext. Price:

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	46,63 kr.	46,63 kr.
	33,20 kr.	332,00 kr.
	25,89 kr.	2.589,00 kr.
	24,39 kr.	12.195,00 kr.
	22,16 kr.	22.160,00 kr.
Full Reel (Order in multiples of 3000)
	22,16 kr.	66.480,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerFLAT-8x8-5
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	25 A
Rds On - Drain-Source Resistance:	110 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	3.25 V
Qg - Gate Charge:	44 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	160 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Reel
Packaging:	Cut Tape
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	7.3 ns
Moisture Sensitive:	Yes
Product Type:	MOSFETs
Rise Time:	5.3 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	50 ns
Typical Turn-On Delay Time:	15 ns
Unit Weight:	180 mg

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Datasheet

STL45N60DM6 Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

600V MDmesh™ DM6 Super-junction MOSFETs

STMicroelectronics 600V MDmesh™ DM6 Super-junction MOSFETs are optimized for ZVS, full-bridge, and half-bridge topologies. With a breakdown voltage of 600V, the MDmesh DM6 Power MOSFETs combine an optimized capacitance profile and lifetime killing process. The STMicroelectronics 600V MDmesh DM6 Super-junction MOSFETs offer a low gate charge (Q_g), very low recovery charge (Q_rr), low recovery time (t_rr), and an excellent R_DS(on) per area.