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STGWA80H65DFBAG

Name: STMicroelectronics STGWA80H65DFBAG
Brand: STMicroelectronics
SKU: 511-STGWA80H65DFBAG
Price: 41.03 DKK
Availability: InStock

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Mouser No:

511-STGWA80H65DFBAG

Mfr. No:

STGWA80H65DFBAG

Mfr.:

STMicroelectronics

Description:

IGBTs Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT

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Datasheet:

STGWA80H65DFBAG Datasheet (PDF)

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In Stock: 293

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	41,03 kr.	41,03 kr.
	24,25 kr.	242,50 kr.
	20,14 kr.	2.416,80 kr.
	19,47 kr.	9.929,70 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.65 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	120 A
Pd - Power Dissipation:	535 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Qualification:	AEC-Q100
Packaging:	Tube
Brand:	STMicroelectronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Product Type:	IGBT Transistors
Factory Pack Quantity:	30
Subcategory:	IGBTs
Unit Weight:	6,100 g

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Datasheet

STGWA80H65DFBAG Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
MXHTS:: 8541299900
ECCN:: EAR99

HB/HB2 Series Insulated-Gate Bipolar Transistors

STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.