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STGWA100H65DFB2

Name: STMicroelectronics STGWA100H65DFB2
Brand: STMicroelectronics
SKU: 511-STGWA100H65DFB2
Price: 46.77 DKK
Availability: InStock

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Mouser No:

511-STGWA100H65DFB2

Mfr. No:

STGWA100H65DFB2

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO-247 lon

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Datasheet:

STGWA100H65DFB2 Datasheet (PDF)

ECAD Model:

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Learn more about STMicroelectronics STGWA100H65DFB2

In Stock: 695

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	46,77 kr.	46,77 kr.
	26,86 kr.	268,60 kr.
	26,18 kr.	2.618,00 kr.
	23,28 kr.	13.968,00 kr.
	18,72 kr.	22.464,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.55 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	145 A
Pd - Power Dissipation:	441 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	STMicroelectronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Gate-Emitter Leakage Current:	250 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	600
Subcategory:	IGBTs
Unit Weight:	6,100 g

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Datasheet

STGWA100H65DFB2 Datasheet (PDF)

PCN

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

STGWA100H65DFB2 HB2 IGBT

STMicroelectronics STGWA100H65DFB2 HB2 IGBT is an evolution of the advanced proprietary trench gate field-stop structure. The HB2 series optimizes conduction with premium V_CE(sat) at low current values and reduced switching energy. The STGWA100H65DFB2 HB2 IGBT features a low V_CE(sat) of 1.55V (typical) at an I_C of 100A.