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STGW8M120DF3

Name: STMicroelectronics STGW8M120DF3
Brand: STMicroelectronics
SKU: 511-STGW8M120DF3
Price: 29.91 DKK
Availability: InStock

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Mouser No:

511-STGW8M120DF3

Mfr. No:

STGW8M120DF3

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop IGBT, M series 1200 V, 8 A low loss

Complete Your Design

Datasheet:

STGW8M120DF3 Datasheet (PDF)

ECAD Model:

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In Stock: 344

Stock:: 344 Can Dispatch Immediately

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	29,91 kr.	29,91 kr.
	19,77 kr.	197,70 kr.
	15,44 kr.	1.544,00 kr.
	13,73 kr.	8.238,00 kr.
	11,71 kr.	14.052,00 kr.
	11,04 kr.	33.120,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.85 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	16 A
Pd - Power Dissipation:	167 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	M
Packaging:	Tube
Brand:	STMicroelectronics
Gate-Emitter Leakage Current:	250 uA
Product Type:	IGBT Transistors
Factory Pack Quantity:	600
Subcategory:	IGBTs
Unit Weight:	6 g

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Datasheet

STGW8M120DF3 Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive V_CE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.