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STGW30H65FB

Name: STMicroelectronics STGW30H65FB
Brand: STMicroelectronics
SKU: 511-STGW30H65FB
Price: 26.48 DKK
Availability: InStock

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Mouser No:

511-STGW30H65FB

Mfr. No:

STGW30H65FB

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop 650 V, 30 A high speed HB series IGBT

Complete Your Design

Datasheet:

STGW30H65FB Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 90

Stock:: 90

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On Order:: 600

Expected 24/08/2026
Factory Lead Time:: 14

Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	26,48 kr.	26,48 kr.
	14,92 kr.	149,20 kr.
	10,29 kr.	1.029,00 kr.
	9,47 kr.	5.682,00 kr.
	9,25 kr.	11.100,00 kr.
	8,95 kr.	26.850,00 kr.
	8,88 kr.	47.952,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.75 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	30 A
Pd - Power Dissipation:	260 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	STGW30H65FB
Packaging:	Tube
Brand:	STMicroelectronics
Continuous Collector Current Ic Max:	60 A
Gate-Emitter Leakage Current:	250 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	600
Subcategory:	IGBTs
Unit Weight:	38 g

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Datasheet

STGW30H65FB Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

HB/HB2 Series Insulated-Gate Bipolar Transistors

STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.