+45 80253834

Part of the TTI Family of Specialists Contact Mouser (Sweden) +45 80253834 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

STGP6M65DF2

Name: STMicroelectronics STGP6M65DF2
Brand: STMicroelectronics
SKU: 511-STGP6M65DF2
Price: 11.49 DKK
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

511-STGP6M65DF2

Mfr. No:

STGP6M65DF2

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop IGBT M series, 650 V 6 A low loss

Complete Your Design

Datasheet:

STGP6M65DF2 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about STMicroelectronics STGP6M65DF2

Availability

Stock:: Non-Stocked

An unexpected error occurred. Please try again later.
Factory Lead Time:: 15 Weeks Estimated factory production time.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- kr.

Ext. Price:

-,-- kr.

Est. Tariff:

Pricing (DKK)

Qty.	Unit Price	Ext. Price
	11,49 kr.	11,49 kr.
	5,50 kr.	55,00 kr.
	4,92 kr.	492,00 kr.
	3,88 kr.	1.940,00 kr.
	3,55 kr.	3.550,00 kr.
	3,27 kr.	6.540,00 kr.
	3,01 kr.	15.050,00 kr.

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-220-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.55 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	12 A
Pd - Power Dissipation:	88 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	STGP6M65DF2
Packaging:	Tube
Brand:	STMicroelectronics
Continuous Collector Current Ic Max:	12 A
Gate-Emitter Leakage Current:	+/- 250 uA
Product Type:	IGBT Transistors
Factory Pack Quantity:	1000
Subcategory:	IGBTs
Unit Weight:	1,800 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

STGP6M65DF2 Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive V_CE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.