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STFH24N60M2

Name: STMicroelectronics STFH24N60M2
Brand: STMicroelectronics
SKU: 511-STFH24N60M2
Price: 15.22 DKK
Availability: InStock

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Mouser No:

511-STFH24N60M2

Mfr. No:

STFH24N60M2

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP wide cr

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Datasheet:

STFH24N60M2 Datasheet (PDF)

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In Stock: 1.018

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	15,22 kr.	15,22 kr.
	9,40 kr.	94,00 kr.
	8,43 kr.	843,00 kr.
	7,53 kr.	3.765,00 kr.
	6,80 kr.	6.256,00 kr.
	6,74 kr.	18.602,40 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	18 A
Rds On - Drain-Source Resistance:	168 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	29 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	30 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	15 ns
Product Type:	MOSFETs
Rise Time:	9 ns
Series:	STFH24N60M2
Factory Pack Quantity:	920
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	60 ns
Typical Turn-On Delay Time:	14 ns
Unit Weight:	2 g

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Datasheet

STFH24N60M2 Datasheet (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between R_DS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.