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STF27N60M2-EP

Name: STMicroelectronics STF27N60M2-EP
Brand: STMicroelectronics
SKU: 511-STF27N60M2-EP
Price: 22.83 DKK
Availability: InStock

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Mouser No:

511-STF27N60M2-EP

Mfr. No:

STF27N60M2-EP

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V, 0.150 Ohm typ., 20 A MDmesh M2 EP Power MOSFET in a TO-220FP pa

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Datasheet:

STF27N60M2-EP Datasheet (PDF)

ECAD Model:

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Learn more about STMicroelectronics STF27N60M2-EP

In Stock: 707

Stock:: 707 Can Dispatch Immediately

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	22,83 kr.	22,83 kr.
	11,56 kr.	115,60 kr.
	10,44 kr.	1.044,00 kr.
	8,50 kr.	4.250,00 kr.
	7,83 kr.	7.830,00 kr.
	7,68 kr.	15.360,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	20 A
Rds On - Drain-Source Resistance:	163 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	33 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	30 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	6.3 ns
Product Type:	MOSFETs
Rise Time:	8.1 ns
Series:	STF27N60M2-EP
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	55.6 ns
Typical Turn-On Delay Time:	13.4 ns
Unit Weight:	2 g

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Datasheet

STF27N60M2-EP Datasheet (PDF)

PCN

Product Change Notification 2024-04-02 (PDF)

TARIC:: 8541100000
CNHTS:: 8541290000
CAHTS:: 8541100090
USHTS:: 8541290065
JPHTS:: 854110090
KRHTS:: 8541109000
MXHTS:: 8541100101
ECCN:: EAR99

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between R_DS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.