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ST8L65N050DM9

Name: STMicroelectronics ST8L65N050DM9
Brand: STMicroelectronics
SKU: 511-ST8L65N050DM9
Price: 49.68 DKK
Availability: InStock

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Mouser No:

511-ST8L65N050DM9

Mfr. No:

ST8L65N050DM9

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 650 V, 38 mOhm typ., 55 A MDmesh DM9 Power MOSFET in a PowerFLAT 8x8 HV package

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Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

ST8L65N050DM9 Datasheet (PDF)

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In Stock: 210

Stock:: 210 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	49,68 kr.	49,68 kr.
	35,06 kr.	350,60 kr.
Full Reel (Order in multiples of 3000)
	35,06 kr.	105.180,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerFLAT-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	55 A
Rds On - Drain-Source Resistance:	35 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	107 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	167 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	3.5 ns
Forward Transconductance - Min:	167 W
Product Type:	MOSFETs
Rise Time:	7 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	80 ns
Typical Turn-On Delay Time:	25 ns

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Datasheet

ST8L65N050DM9 Datasheet (PDF)

TARIC:: 8541290000

MDmesh™ M9 Power MOSFETs

STMicroelectronics MDmesh™ M9 Power MOSFETs feature enhanced device structure, low ON resistance, and low gate charge values. These power MOSFETs offer high reverse diode dv/dt and MOSFET dv/dt ruggedness, high power density, and low conduction losses. The MDmesh M9 Power MOSFETs also offer high switching speed, high efficiency, and low switching power losses. These power MOSFETs are designed with innovative high-voltage super-junction technology that delivers impressive Figure of Merit ((FoM). The high FoM enables higher power levels and density for more compact solutions. Typical applications include servers, telecom data centers, 5G power stations, microinverters, and fast chargers.