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Mfr.	Mfr. No:	Qty	Ext Total

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SCT027TO65G3

STMicroelectronics

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See Product Specifications

Mouser No:

511-SCT027TO65G3

Mfr. No:

SCT027TO65G3

Mfr.:

STMicroelectronics

Description:

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in a TO-LL package

Complete Your Design

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

SCT027TO65G3 Datasheet (PDF)

ECAD Model:

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 19 Weeks Estimated factory production time.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- kr.

Ext. Price:

-,-- kr.

Est. Tariff:

Pricing (DKK)

Qty.	Unit Price	Ext. Price
	80,20 kr.	80,20 kr.
	59,90 kr.	599,00 kr.
	51,77 kr.	5.177,00 kr.
	49,01 kr.	24.505,00 kr.
	41,70 kr.	41.700,00 kr.
Full Reel (Order in multiples of 1800)
	41,70 kr.	75.060,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC MOSFETs
RoHS:
Brand:	STMicroelectronics
Packaging:	Reel
Packaging:	Cut Tape
Product Type:	SiC MOSFETS
Factory Pack Quantity:	1800
Subcategory:	Transistors

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Datasheet

SCT027TO65G3 Datasheet (PDF)

PCN

Product Change Notification 2025-11-26 (PDF)

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

FEATURED PRODUCTS

STMICROELECTRONICS

SCTWA90N65G2Vx 650V Power MOSFETs

Silicon carbide (SiC) MOSFETs with 650V, 18mΩ typical, and 119A in an HiP247 and HiP247-4 packages.

Automotive-Grade Silicon Carbide Power MOSFETs

Developed using ST's advanced and innovative 2nd/3rd generation SiC MOSFET technology.

650V 3rd Gen SiC MOSFETs

Features low R_DS(on) per area, even at high temperatures, and excellent switching performance.

Silicon Carbide Power MOSFETs

Bring the advanced efficiency and reliability of wide bandgap materials to a broader range.

HB/HB2 Series Insulated-Gate Bipolar Transistors

Combine a very low saturation voltage with a minimal collector current turn-off tail.