SCT018H65G3AG

STMicroelectronics
511-SCT018H65G3AG
SCT018H65G3AG

Mfr.:

Description:
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
Complete Your Design

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about STMicroelectronics SCT018H65G3AG

In Stock: 202

Stock:
202 Can Dispatch Immediately
Factory Lead Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1000)

Pricing (DKK)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
99,29 kr. 99,29 kr.
70,12 kr. 701,20 kr.
63,93 kr. 31.965,00 kr.
Full Reel (Order in multiples of 1000)
54,23 kr. 54.230,00 kr.
† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
H2PAK-7
N-Channel
1 Channel
650 V
55 A
27 mOhms
- 18 V, + 18 V
4.2 V
79.4 nC
- 55 C
+ 175 C
385 W
Enhancement
AEC-Q101
Brand: STMicroelectronics
Configuration: Single
Fall Time: 25 ns
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product Type: SiC MOSFETS
Rise Time: 28 ns
Factory Pack Quantity: 1000
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 56 ns
Typical Turn-On Delay Time: 25 ns
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

This functionality requires JavaScript to be enabled.

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

650V 3rd Gen SiC MOSFETs

STMicroelectronics 650V 3rd Generation Silicon Carbide (SiC) MOSFETs feature low on-state resistance (RDS(on)) per area, even at high temperatures, and excellent switching performance. This translates into more efficient and compact systems. The SiC MOSFETs feature excellent switching performance over IGBTs, simplifying the thermal design of power electronic systems. These 650V SiC MOSFETs have been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The low RDS(on), low capacitances, and high switching operations improve application performance in frequency, energy efficiency, system size, and weight reduction.

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance RDS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.  

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.