SCT012H90G3AG

STMicroelectronics
511-SCT012H90G3AG
SCT012H90G3AG

Mfr.:

Description:
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package

ECAD Model:
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In Stock: 75

Stock:
75
Can Dispatch Immediately
On Order:
1.000
Expected 17/08/2026
Factory Lead Time:
21
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
131,89 kr. 131,89 kr.
94,67 kr. 946,70 kr.
91,98 kr. 9.198,00 kr.
Full Reel (Order in multiples of 1000)
85,86 kr. 85.860,00 kr.

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
H2PAK-7
N-Channel
1 Channel
900 V
110 A
12 mOhms
- 18 V, + 18 V
4.2 V
138 nC
- 55 C
+ 175 C
625 W
Enhancement
AEC-Q101
Brand: STMicroelectronics
Configuration: Single
Country of Assembly: IT
Country of Diffusion: Not Available
Country of Origin: IT
Fall Time: 30 ns
Packaging: Reel
Packaging: Cut Tape
Product: MOSFETs
Product Type: SiC MOSFETS
Rise Time: 47 ns
Factory Pack Quantity: 1000
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Type: silicon carbide Power MOSFET
Typical Turn-Off Delay Time: 82 ns
Typical Turn-On Delay Time: 37 ns
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TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99