MASTERGAN1L

STMicroelectronics
511-MASTERGAN1L
MASTERGAN1L

Mfr.:

Description:
Gate Drivers 600 V half-bridge enhancement mode GaN HEMT with high voltage driver
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Datasheet:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
26 Weeks Estimated factory production time.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
56,55 kr. 56,55 kr.
42,37 kr. 423,70 kr.
40,43 kr. 1.010,75 kr.
35,06 kr. 3.506,00 kr.
33,50 kr. 8.375,00 kr.
30,51 kr. 15.255,00 kr.
27,30 kr. 27.300,00 kr.

Alternative Packaging

Mfr. Part No.:
MASTERGAN1LTR
Packaging:
Reel, Cut Tape
Availability:
In Stock
Price:
45,80 kr.
Min:
1

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: Gate Drivers
RoHS:  
Half-Bridge Drivers
Half-Bridge
SMD/SMT
QFN-31
4 Output
12 A
4.75 V
9.5 V
Non-Inverting
- 40 C
+ 125 C
MASTERGAN
Tray
Brand: STMicroelectronics
Moisture Sensitive: Yes
Pd - Power Dissipation: 40 mW
Product Type: Gate Drivers
Propagation Delay - Max: 70 ns
Factory Pack Quantity: 1560
Subcategory: PMIC - Power Management ICs
Technology: GaN
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Attributes selected: 0

Datasheet

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CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

MASTERGAN GaN Half-Bridge High Voltage Drivers

STMicroelectronics MASTERGAN GaN Half-Bridge High Voltage Drivers implement a high-power-density power supply with the integration of both a gate driver and two enhancement-mode GaN transistors in a half-bridge configuration. The integrated power GaNs feature an RDS(ON) of 150mΩ and a 650V drain-source breakdown voltage. The integrated bootstrap diode can quickly supply the high side of the embedded gate driver.

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